ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

FEATURES

  • Faster switching
  • Low power losses
  • Increased power density
  • Higher operating temperatures
  • Higher efficiency
  • Compact solutions
  • Lower weight
  • Reduced system cost
  • Increased reliability

APPLICATIONS

  • Solar boost converters and inverters
  • Power factor correction
  • Electric vehicle charging
  • Uninterruptible Power Supplies (UPS)
  • Server and telecom power supplies

PERFORMANCE GRAPH

ON Semiconductor Performance Graph

ON Semiconductor SiC Schottky Diodes

Provide superior switching performance and higher reliability to silicon-based devices.

ON Semiconductor SiC Schottky Diodes

ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Learn more about ON Semiconductor Diodes: See Products

ON Semiconductor SiC Diodes and IGBT Power Integrated Modules

Designed to provide lower conduction and switching losses.

ON Semiconductor SiC Diodes and IGBT Power Integrated Modules

ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.

Popular part numbers:  NXH80B120H2Q0SG, FPF2G120BF07ASP, FPF2G120BF07AS, FPF2C110BI07AS2

ON Semiconductor NxHL080N120SC1 N-Channel SiC MOSFETs

1200V, 80mΩ, high-speed switching, AEC-Q101 automotive qualified, and come in TO247-3L package.

ON Semiconductor NxHL080N120SC1 N-Channel SiC MOSFETs

ON Semiconductor NxHL080N120SC1 N-Channel SiC MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip size that ensures low capacitance and low gate charge. The NxHL080N120SC1 MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L package. The NVHL080N120SC1 MOSFET is qualified for automotive grade according to AEC-Q101 certification.

Popular part numbers:  NVHL080N120SC1, NTHL080N120SC1

 ON Semiconductor NCP51705 Gate Driver

Single 6A high-speed driver designed to drive low-side SiC MOSFET transistors.

ON Semiconductor NCP51705 Gate Driver

ON Semiconductor NCP51705 Gate Driver is designed to primarily drive SiC MOSFET transistors. This gate driver achieves the lowest possible conduction losses, the driver is capable to deliver the maximum gate voltage to the SiC MOSFET device. The NCP51705 driver utilizes its onboard charge pump to generate a user selectable negative voltage rail. This gate driver provides an externally accessible 5V rail to power the secondary side of digital or high-speed opto-isolators. The NCP51705 driver offers protection functions such as under-voltage lockout monitoring and thermal shutdown based on the junction temperature of the driver circuit. Typical applications include driving SiC MOSFETs, industrial inverters, motor drivers, PFC, AC to DC, and DC to DC converters.

  • High peak output current with split output stages to allow independent turn-on/turn-off adjustment:
  • 6A source capability
  • 6A sink capability
  • Extended positive voltage rating for efficient SiC MOSFETs operation during the conduction period
  • User-adjustable built-in negative charge pump for fast turn-off and Robust dV/dt immunity
  • Accessible 5V reference/bias rail for digital oscillator supply
  • Adjustable under-voltage lockout
  • Desaturation function
  • Thermal Shutdown (TSD) function
  • Small and low parasitic inductance QFN24 package

APPLICATIONS:

  • Driving     SiC MOSFETs
  • Industrial     inverters and motor drivers
  • PFC,     AC to DC, and DC to DC converters

NCP51705 INTERNAL BLOCK DIAGRAM

NCP51705 INTERNAL BLOCK DIAGRAM

Popular part numbers:  NCP51705MNTXG

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