Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-268AA

Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel, TO-252AA

Insulated Gate Bipolar Transistor, 28A I(C), 1400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 7A I(C), 1400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 7A I(C), 1600V V(BR)CES, N-Channel

IGBT 3000V 30A 160W TO268

IGBT, IXBN75N170, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High blocking voltage Low conduction losses MOS gate turn on for drive simplicity Simpler system design Applications Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits

Trans IGBT Chip N-CH 2500V 73A 595W 3-Pin(3+Tab) TO-264

Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor, 30A I(C), 1350V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-254AA

IRG4PC30F - 600V FAST 1-8 KHZ DI

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD

IGBT 600V 23.5A 45W TO220FP

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel