Name: IXBN75N170 by Littelfuse
Brand: Littelfuse
SKU: IXBN75N170-8349380740

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
IGBT, IXBN75N170, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High blocking voltage Low conduction losses MOS gate turn on for drive simplicity Simpler system design Applications Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

Supply Attributes — the amount of time between an order placement and the shipment of the order — refers to the packaging that can be expected for the offer — indicates how the components were made — indicates the category of vendor for the given offer — Date code is used to determine when a product was manufactured.The first two digits indicate the year while the 3rd and 4th digits indicate the week of manufacture. The date code can be found printed on the product label.	Supplier Availability	Price	Quantity
Date Code 25+ The standard date code format is YYWW. Packaging Unknown Pack Condition Unknown Supplier Type Qualified third party	Stock A supplier has indicated potential availability for this part upon bid. 970 Lead Time 27 weeks 6 days		Bid QuantityBid Price Per Unit (USD)

IXBN75N170

Littelfuse