Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 22A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

IGBT 600V 60A 160W TO220AB

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel

IGBT MODULE

IGBT Transistors disc igbt npt-standard to-3 fp

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

IGBTs isoplus 1700v 5.5a igbt

Trans IGBT Chip N-CH 445V 51A 300W Automotive 3-Pin(2+Tab) D2PAK T/R

IGBT, IXYH60N90C3, Littelfuse High-speed IGBT for 20-50 kHz switching, optimized for low switching losses with high power density and low gate drive requirements. Features Square RBSOA Positive thermal coefficient of Vce(sat) International standard package Applications High frequency power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts

Trans IGBT Chip N-CH 1200V 60A 330W 3-Pin(3+Tab) TO-247 Tube

Trans IGBT Chip N-CH 1200V 150A 880W 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB

IGBT Transistors igbt bimosfet-high volt

IGBT 650V 15A TO220

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB

IGBT 600V 60A 250W TO247

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel

IGBT 1200V 188A 1150W TO264

IGBT 650V 40A TO-247A Built-In FRD

IHM-B module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and pre-applied Thermal Interface Material

Trans IGBT Chip N-CH 650V 60A 176W 3-Pin(3+Tab) TO-247 Tube

Trans IGBT Module N-CH

Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R

Trans IGBT Chip N-CH 600V 50A 230W 3-Pin(3+Tab) TO-3PN Magazine