RF Power Field-Effect Transistors

RF FET LDMOS 65V 18.5DB SOT502A

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

High efficiency heterojunction p

RF TRANS NPN 5.5V SOT143

RF TRANS NPN 5.5V SOT23

RF Power Transistor, up to 0.45 GHz, 0.5 W, 12.5 V

180W, GAN HEMT, 50V, DC-4.0GHZ,

RF MOSFET HEMT 50V 440217

350 W; 5200 to 5900-MHz; 50-Ohm Input/Output-Matched; GaN HEMT

RF Power Field-Effect Transistor, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

30-W; DC – 6-GHz; 50-V; GaN HEMT

RF MOSFET HEMT 40V 440210

CLF1G0060-10 - 10W BROADBAND RF

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

IC PHEMT 2GHZ 4V 135MA SOT-89