Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor

IGBT Transistors igbt modules ixa20rg1200dhg-tr

Insulated Gate Bipolar Transistor, 63A I(C), 1200V V(BR)CES

IGBT 1200V 84A 290W TO247

Trans IGBT Chip N-CH 2500V 5A 32W 3-Pin(3+Tab) TO-247AD

Insulated Gate Bipolar Transistor, 40A I(C), 1700V V(BR)CES, N-Channel, TO-268AA

IGBT, IXBN42N170A, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High blocking voltage Low conduction losses MOS gate turn on for drive simplicity Simpler system design Applications Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IGBT MOD 1200V 300A POWIR 62

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES

IGBT MOD 1200V 130A POWIR 34

Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA