IRGS4B60KTRL
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Fall Time-Max (tf)89 ns
- Number of Elements1
- Rise Time-Max (tr)23 ns
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)40 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)199 ns
- Operating Temperature-Max175 Cel
- Collector Current-Max (IC)12 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)63 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5.5 V
- Collector-emitter Voltage-Max600 V
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IRGS4B60KTRL