Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 10A I(C), N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 130A I(C), 400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 130A I(C), 400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 200A I(C), 400V V(BR)CES, N-Channel

IGBT MOD 1700V 150A 1100W

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES

Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, N-Channel

MITSUBISHI ELECTRIC - CM200DU-12H - IGBT Module, Dual [Half Bridge], 200 A, 600 V, 650 W, 150 °C, Module

IGBT MOD 1700V 200A 1980W

IGBT MOD 1200V 200A 1160W

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES

IGBT MOD 600V 300A 960W

IGBT MOD 1400V 300A 2100W

IGBT MOD 1200V 300A 1890W