PHMB600A6
NIHON INTER ELECTRONICS CORP
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.6 V
- JESD-30 CodeR-XUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)450 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)600 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)600 A
- Power Dissipation-Max (Abs)2080 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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PHMB600A6
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PHMB600A6