CM200DU-12H by Mitsubishi Electric Corp. | Sourcengine

Mitsubishi Electric Corp. CM200DU-12H

Lifecycle status
NRFND
Description
MITSUBISHI ELECTRIC - CM200DU-12H - IGBT Module, Dual [Half Bridge], 200 A, 600 V, 650 W, 150 °C, Module
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3 V
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
550 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
600 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
200 A
Power Dissipation-Max (Abs)
650 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED