RF Small Signal Field-Effect Transistors

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92

RF Small Signal Field-Effect Transistor, N-Channel

RF Small Signal Field-Effect Transistor, N-Channel

RF Small Signal Field-Effect Transistor

RF Small Signal Field-Effect Transistor, N-Channel

RF Small Signal Field-Effect Transistor, N-Channel

RF Small Signal Field-Effect Transistor

RF Small Signal Field-Effect Transistor, KU Band, Silicon, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET

BLF2324M8LS200PU

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Transistor, 0.90 to 0.93 GHz, 500 W, 19.5 dB, 50 V, SOT502B, LDMOS

RF Power Transistor, 1.805 to 1.88 GHz, 400 W, 16.2 dB, 32 V, SOT1258-7, LDMOS

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72

RF Power Transistor, 2.3 to 2.7 GHz, 50 W, 29 dB, 28 V, SOT502, LDMOS

RF Power Transistor, 0.96 to 1.215 GHz, 700 W, 20 dB, 50 V, SOT502E, LDMOS

RF Power Transistor, 1.93 to 1.995 GHz, 630 W, 15.5 dB, 30 V, SOT1258-4, LDMOS