RF Small Signal Field-Effect Transistors

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Transistor, 2.11 to 2.17 GHz, 240 W, 19.7 dB, 28 V, SOT1275-1, LDMOS

RF Power Transistor, 2.496- 2.69 GHz, 160 W, 14.5 dB, 28 V, LDMOS, Assymetrical Doherty

RF MOSFET LDMOS 28V SOT1258-7

RF MOSFET LDMOS 32V SOT1258-7

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Transistor, 1.8 to 2.0 GHz, 160 W, 19.8 dB, 28 V, SOT1120B, LDMOS

RF FET LDMOS 65V 35DB SOT12112

RF Power Transistor, 10 to 600 MHz, 150 W, 27 dB, 50 V, SOT1223-2, LDMOS

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET