RF Small Signal Field-Effect Transistors

RF Power Transistor, 0.616 to 0.96 GHz, 630 W, 18 dB, 48 V, SOT1250-4, LDMOS

RF Small Signal Field-Effect Transistor, 1-Element, Silicon

RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, N-Channel, Metal Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Power, Transistor, 0.96 to 1.215 GHz, 250 W, 22 dB, 50 V, SOT502A, LDMOS

RF Power Transistor, 2.5 to 2.7 GHz, 100 W, 17 dB, 28 V, SOT502B, LDMOS

RF Power Transistor, 0.617 to 0.96 GHz, 350 W, 19 dB, 50 V, SOT1273-1, LDMOS

RF Power Transistor, 0.01 to 0.70 GHz, 500 W, 25.7 dB, 50 V, SOT539A, LDMOS

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72