RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF TRANS NPN 12V 8GHZ SOT323-3

RF TRANS NPN 9V 14GHZ SC75

RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF PFET, 1-ELEMENT, ULTRA HIGH F

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET

35-W RF Power GaN HEMT

RF Power Field-Effect Transistor

CG2H80045D

30-W; 28-V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

30-W; 28-V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

30W, GAN HEMT, 28V, DC-6.0GHZ, P

25-W RF Power GaN HEMT

90-W RF Power GaN HEMT

15-W; 3300 – 3900-MHz; 28-V; GaN HEMT for WiMAX

6-W; DC - 15.0 GHz; 40-V; GaN HEMT

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Nitride, N-Channel, High Electron Mobility FET

180-W; DC - 2 GHz; GaN HEMT

500W, GAN HEMT, 50V, 0.9-1.5GHZ,

800-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-5