RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

60W GAN HEMT 28V 4.0GHZ FLANGE

15-W; 28-V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

RF MOSFET HEMT 28V 440199

25-W; DC – 15-GHz; 40-V; GaN HEMT

TRANS RF FET N-CH 84V 1.5A GAN

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

25-W; C-band; Unmatched; GaN HEMT

15-W; 6.0-GHz; GaN HEMT Die

RF MOSFET HEMT 50V 440206

60-W; DC to 2700-MHz; 50-V; GaN HEMT for LTE and Pulse-Radar Applications

RF Power Field-Effect Transistor

120-W; 6.0-GHz; GaN HEMT Die

250-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems