Insulated Gate Bipolar Transistors

IGBT, 80A, 650V, N-CHANNEL, TO-2

INSULATED GATE BIPOLAR TRANSISTOR, 40A, 600V, N-CHANNEL, TO-220AB

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 350A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 440A I(C), 1600V V(BR)CES

Insulated Gate Bipolar Transistor, 14A I(C), 370V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 30A I(C), 450V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES

Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1000V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES

IGBT Transistors ixga12n120a3 trl

Insulated Gate Bipolar Transistor

IGBT, IXGF25N250, LITTELFUSE A high voltage IGBT with high peak current capability, an electrically isolated tab, and a low saturation voltage. Features UL recognized package MOS gate turn-on - drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification High power density Easy to mount Applications Capacitor discharge Pulse circuits

Insulated Gate Bipolar Transistor, 40A I(C), 800V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor