Insulated Gate Bipolar Transistors

IGBT 900V 75A 400W TO264

IGBT 600V 75A 500W TO264

IGBT 600V 75A 480W TO264

Insulated Gate Bipolar Transistor, 500A I(C), 600V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 50A I(C), 500V V(BR)CES, N-Channel

IGBT 600V 50A 200W TO-204AE

IGBT MODULE 600V SOT227B

IGBT Transistors discrete igbt high speed series

IGBT 600V 100A 600W TO247AD

IGBT 600V 340A 1630W TO264

Insulated Gate Bipolar Transistor, 38A I(C), 650V V(BR)CES, N-Channel, TO-263AA

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

IGBT MOD 600V 200A 780W SOT227B

Insulated Gate Bipolar Transistor, 76A I(C), 1000V V(BR)CES, N-Channel, TO-263AB

Trans IGBT Chip N-CH 1200V 36A 230W 3-Pin(3+Tab) TO-247AD

IGBT, IXYH40N120C3, Littelfuse High-speed IGBT for 20-50 kHz switching, optimized for low switching losses with high power density and low gate drive requirements. Features Square RBSOA Positive thermal coefficient of Vce(sat) Avalanche rated High current handling capability International standard package Applications High frequency power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts

IGBT, IXYH40N120A4, Littelfuse Ultra low-Vsat PT IGBT for up to 5 kHz switching, optimized for low conduction with high power density and low gate drive requirements. Features Positive thermal coefficient of Vce(sat) International standard package Applications Power inverters Inrush current protection circuits UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts

Trans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-254AA