YTS2221ATE85L
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-236
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max1 V
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)35 ns
- Turn-off Time-Max (toff)285 ns
- DC Current Gain-Min (hFE)25
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.6 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max40 V
- Transition Frequency-Nom (fT)250 MHz
- Collector-base Capacitance-Max8 pF
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YTS2221ATE85L