YJS8205AF2 by Yangjie Electronic Technology | Sourcengine

Yangjie Electronic Technology YJS8205AF2

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 5.5A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.25
Drain Current-Max (ID) (A)
5.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Feedback Cap-Max (Crss) (pF)
70
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.25
Pulsed Drain Current-Max (IDM) (A)
19
Drain-source On Resistance-Max (ohm)
0.025