YJ12N65CMB1
Yangjie Electronic Technology
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11.5A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)11.5
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)277
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)28
- Turn-off Time-Max (toff) (ns)490
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)590
- Pulsed Drain Current-Max (IDM) (A)46
- Drain-source On Resistance-Max (ohm)0.75
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