YJ10N65CMB1 by Yangjie Electronic Technology | Sourcengine

Yangjie Electronic Technology YJ10N65CMB1

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 10A I(D), 650V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
10
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
264
DS Breakdown Voltage-Min (V)
650
Feedback Cap-Max (Crss) (pF)
23
Turn-off Time-Max (toff) (ns)
491
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
40
Drain-source On Resistance-Max (ohm)
0.85