TPH11003NL,LQ
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionMOSFETs pb-f power mosfet transistor sop8-adv pd=21w f=1mhz
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)21
- Drain Current-Max (ID) (A)32
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)50
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)29
- Pulsed Drain Current-Max (IDM) (A)63
- Drain-source On Resistance-Max (ohm)0.011
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