TPC8002
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 11A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)11 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)2.4 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)157 mJ
- Power Dissipation Ambient-Max2.4 W
- Drain-source On Resistance-Max0.022 ohm
- Pulsed Drain Current-Max (IDM)44 A
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TPC8002