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TOLD9442M(TR)

Toshiba Corporation

Toshiba Corporation TOLD9442M(TR)
  • Packing Method
    TR
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    650
  • Semiconductor Material
    AlGaInP
  • Forward Current-Max (A)
    0.06
  • Forward Voltage-Max (V)
    3
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    60
  • Operating Temperature-Min (Cel)
    -10

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TOLD9442M(TR)
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TOLD9442M(TR)