TK65S04K3L
Toshiba Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 65A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Reference StandardAEC-Q101
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)65 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min40 V
- Power Dissipation-Max (Abs)88 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)130 mJ
- Drain-source On Resistance-Max0.0079 ohm
- Pulsed Drain Current-Max (IDM)130 A
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TK65S04K3L
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TK65S04K3L