TK65G10N1
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionPower Field-Effect Transistor, 100A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)100 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)42 pF
- DS Breakdown Voltage-Min100 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)156 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)93 mJ
- Drain-source On Resistance-Max0.0045 ohm
- Pulsed Drain Current-Max (IDM)283 A
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TK65G10N1