TK62J60W(Q)
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 61.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountNO
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)400
- Drain Current-Max (ID) (A)61.8
- Operating Temperature-Max (Cel)150
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TK62J60W(Q)