TK560P60Y,RQ
Toshiba Corporation
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologySUPERJUNCTION MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)60
- Drain Current-Max (ID) (A)7
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Feedback Cap-Max (Crss) (pF)2.5
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)64
- Pulsed Drain Current-Max (IDM) (A)28
- Drain-source On Resistance-Max (ohm)0.56
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TK560P60Y,RQ