TK31V60W5
Toshiba Corporation
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionToshiba
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PSSO-N4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)30.8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Avalanche Energy Rating (Eas) (mJ)338
- Pulsed Drain Current-Max (IDM) (A)123
- Drain-source On Resistance-Max (ohm)0.109
0 suppliers available to buy or to bid for TK31V60W5
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
TK31V60W5
Send an RFQ
TK31V60W5