TK30A06J3
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionPower Field-Effect Transistor, 30A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)30
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Avalanche Energy Rating (Eas) (mJ)58
- Pulsed Drain Current-Max (IDM) (A)90
- Drain-source On Resistance-Max (ohm)0.035
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TK30A06J3