TK12X53D
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionPower Field-Effect Transistor, 12A I(D), 525V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PDSO-F4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)12 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min525 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)378 mJ
- Drain-source On Resistance-Max0.58 ohm
- Pulsed Drain Current-Max (IDM)48 A
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TK12X53D