TK100F06K3(TE24L)
Toshiba Corporation
- Lifecycle statusEOL
- DescriptionPower Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)100 A
- Operating Temperature-Max175 Cel
- Power Dissipation-Max (Abs)180 W
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TK100F06K3(TE24L)