TJ8S06M3L by Toshiba Corporation | Sourcengine

Toshiba Corporation TJ8S06M3L

Lifecycle status
Active
RoHS
RoHS compliant
Description
TOSHIBA - TJ8S06M3L - Power MOSFET, P Channel, 60 V, 8 A, 0.08 ohm, TO-252 (DPAK), Surface Mount
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
27
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
60
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
19
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
0.13
Screening Level / Reference Standard
AEC-Q101