TGI7785-120L
Toshiba Corporation
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionGaN FETs transistor gan hemt internally matched, 8.5 ghz, 50w, pd 140w
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Drain Current-Max (ID) (A)18
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)50
- Operating Temperature-Max (Cel)175
- Power Dissipation Ambient-Max (W)280
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TGI7785-120L