TD62593AP
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Plastic/Epoxy, 18 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDIP-T18
- ConfigurationCOMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE, BUILT IN BIAS RESISTOR RATIO 3.70
- Number of Elements8
- Number of Terminals18
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)50
- Operating Temperature-Max85 Cel
- Collector Current-Max (IC)0.15 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max50 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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TD62593AP