TC59YM916BKG32C by Toshiba Corporation | Sourcengine

Toshiba Corporation TC59YM916BKG32C

Lifecycle status
Active-Unconfirmed
Description
Rambus DRAM, 32MX16, CMOS, PBGA100
Category
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
14.56
Access Mode
BLOCK ORIENTED PROTOCOL
Length (mm)
15.18
JESD-30 Code
R-PBGA-B100
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
RAMBUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
SELF CONTAINED REFRESH
Memory Organization
32MX16
Number of Functions
1
Number of Terminals
100
Terminal Pitch (mm)
0.8
Number of Words Code
32M
Memory Density (bits)
536870912
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.86
Supply Voltage-Min (V)
1.74
Supply Voltage-Nom (V)
1.8
Number of Words (words)
33554432
Standby Current-Max (A)
5.0E-5
Supply Current-Max (mA)
1450
Package Equivalence Code
BGA100,11X16,50/32