TC55VBM416AFTN55 by Toshiba Corporation | Sourcengine

Toshiba Corporation TC55VBM416AFTN55

Lifecycle status
Discontinued
Description
Standard SRAM, 1MX16, 70ns, CMOS, PDSO48
Category
Semiconductors Memory ICs SRAMs STANDARD SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
12
Length (mm)
18.4
JESD-30 Code
R-PDSO-G48
Memory Width
16
Package Code
TSOP1
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
1MX16
Number of Functions
1
Number of Terminals
48
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
70
Number of Words Code
1M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Alternate Memory Width
8
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
3
Number of Words (words)
1048576
Standby Voltage-Min (V)
1.5
Supply Current-Max (mA)
35
Package Equivalence Code
TSSOP48,.8,20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED