TA4007F-GR
Toshiba Corporation
- Lifecycle statusActive-Unconfirmed
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G5
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Power Gain-Min (Gp)24 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max85 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max0.25 W
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TA4007F-GR