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SSM3J356R,LF(B

Toshiba Corporation

Toshiba Corporation SSM3J356R,LF(B
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-F3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e3
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    P-CHANNEL
  • Power Dissipation-Max (W)
    1
  • Drain Current-Max (ID) (A)
    2
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    60
  • Feedback Cap-Max (Crss) (pF)
    25
  • Operating Temperature-Max (Cel)
    150
  • Pulsed Drain Current-Max (IDM) (A)
    6
  • Drain-source On Resistance-Max (ohm)
    0.4

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SSM3J356R,LF(B
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SSM3J356R,LF(B