SSM3J14T(T5LPAS,E)
Toshiba Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 2.7A I(D), 30V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)2.7 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)77 pF
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.7 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.17 ohm
- Pulsed Drain Current-Max (IDM)5.4 A
0 suppliers available to buy or to bid for SSM3J14T(T5LPAS,E)
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SSM3J14T(T5LPAS,E)
Send an RFQ
SSM3J14T(T5LPAS,E)