SPS04N60C3E8177
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-251AA
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4.5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)130 mJ
- Drain-source On Resistance-Max0.95 ohm
- Pulsed Drain Current-Max (IDM)13.5 A
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SPS04N60C3E8177