SPS04N60C3AT by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG SPS04N60C3AT

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-251
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4.5 A
Feedback Cap-Max (Crss)
15 pF
DS Breakdown Voltage-Min
600 V
Turn-off Time-Max (toff)
94 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
130 mJ
Drain-source On Resistance-Max
0.95 ohm
Pulsed Drain Current-Max (IDM)
13.5 A