SPN04N60C2 by INFINEON TECHNOLOGIES AG | Sourcengine

INFINEON TECHNOLOGIES AG SPN04N60C2

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 0.8A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.8 A
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
1.8 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.95 ohm
Pulsed Drain Current-Max (IDM)
3 A