SPD30N03S2L07GBTMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- DescriptionMOSFET N-CH 30V 30A TO252-3
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)30
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Avalanche Energy Rating (Eas) (mJ)250
- Pulsed Drain Current-Max (IDM) (A)120
- Drain-source On Resistance-Max (ohm)0.0098
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SPD30N03S2L07GBTMA1