SPD07N60S5NTMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)7.3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Avalanche Energy Rating (Eas) (mJ)230
- Pulsed Drain Current-Max (IDM) (A)14.6
- Drain-source On Resistance-Max (ohm)0.6
0 suppliers available to buy or to bid for SPD07N60S5NTMA1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SPD07N60S5NTMA1
Send an RFQ
SPD07N60S5NTMA1