SPD06N80C3-E6327
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)6
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)800
- Operating Temperature-Max (Cel)175
- Avalanche Energy Rating (Eas) (mJ)230
- Pulsed Drain Current-Max (IDM) (A)18
- Drain-source On Resistance-Max (ohm)0.9
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SPD06N80C3-E6327