SPD02N60S5BTMA1
INFINEON TECHNOLOGIES AG
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH 600V 1.8A 3-Pin TO-252 T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)1.8
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)50
- Pulsed Drain Current-Max (IDM) (A)3.2
- Drain-source On Resistance-Max (ohm)3
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SPD02N60S5BTMA1