SP001573008
INFINEON TECHNOLOGIES AG
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 10A I(D), 20V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)9.6
- Drain Current-Max (ID) (A)10
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)180
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)88
- Drain-source On Resistance-Max (ohm)0.0155
0 suppliers available to buy or to bid for SP001573008
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SP001573008
Send an RFQ
SP001573008