SP001545780
INFINEON TECHNOLOGIES AG
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max1.8 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Fall Time-Max (tf)230 ns
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)68 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Max (toff)580 ns
- Turn-off Time-Nom (toff)390 ns
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)31 A
- Power Dissipation-Max (Abs)100 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max600 V
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SP001545780