SP000379671
INFINEON TECHNOLOGIES AG
- Lifecycle statusNRFND
- DescriptionInsulated Gate Bipolar Transistor, 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)2.2
- Case ConnectionISOLATED
- Polarity/Channel TypeN-Channel
- Power Dissipation-Max (W)515
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)165
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)570
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.4
- Collector-emitter Voltage-Max (V)1200
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SP000379671